Investigation of Deposition Temperature and Time Effect on the Quality of FSF in n-PERT Solar Cells Using Phosphorus Doped Paper Sheets

Authors

Labdelli Boutaleb
Research Center in Semiconductor Technology for Energetic (CRTSE) 02 Bd. Frantz Fanon—Alger, BP N°140, Les 07 Merveilles, Algiers, Algeria
Medani Sonia
Mouloud Mammeri University of Tizi Ouzou (UMMTO) Faculty of Electrical and Computer Engineering Department of Electronics BP N ° 17 RP, Hasnaoua I, 15000 Tizi-Ouzou Algeria
Hamidi Samira
Mouloud Mammeri University of Tizi Ouzou (UMMTO) Faculty of Electrical and Computer Engineering Department of Electronics BP N ° 17 RP, Hasnaoua I, 15000 Tizi-Ouzou Algeria
Abdelghani Boucheham
Research center in semiconductor technology for energetic, 02, Bd Frantz Fanon, les 7 merveilles, Algiers, Algeria
Djelloul Abdelkader
Research Center in Semiconductor Technology for Energetic (CRTSE) 02 Bd. Frantz Fanon—Alger, BP N°140, Les 07 Merveilles, Algiers, Algeria
Benharrat Lyes
Research Center in Semiconductor Technology for Energetic (CRTSE) 02 Bd. Frantz Fanon—Alger, BP N°140, Les 07 Merveilles, Algiers, Algeria

Synopsis

The generation of phosphorus-diffused Front Surface Fields (FSF) is regarded as a key step in the fabrication of high-conversion-efficiency n-type PERT (passivated emitter rear fully diffused) solar cells. Experimental data show that the application of a FSF reduces the total series resistance. The penetration depths in the range of 0.50 μm and 0.81 μm, the dopants surface concentrations are 2.5 E21 cm−3 and 1.9 E22 cm−3 for n-850 and n-900 °C respectively. The passivation property was studied, and it was discovered that the effective lifetime grew considerably to127 µs at 900 °C and a deposit period of 20 minutes, and subsequently decreased to up to 20µs at the same temperature and a deposition time of 6 minutes.

ICCAP2021
Published
March 8, 2022