Influence of Porosity on the Structural and Electronic Properties of Porous Silicon

Authors

Hanane. Lachenani
Laboratoire de Physique des Techniques Expérimentales et ses Applications de Médéa LPTEAM, Département Science de la Matière, Faculté des Sciences, Université de Médéa Algérie
Souad.Ouir
Laboratoire de Surfaces, Interface et Couches Minces, Département de Physique, Facultés des Sciences, Université Blida1, Algérie, Address B.P 270, Route de Soumaa, Blida, Algeria
Nourdinne. Gabouze
Centre de Recherche en Technologie des Semi-conducteurspour l’Energétique (CRTSE), 02 Bd, Frantz Fanon, B.P. 140, Alger, Algérie

Synopsis

Porous silicon (PSi) is a promising material for several applications in significant and varied fields photoluminescence (PL), electroluminescence (EL) and gas and (bio) sensing, etc. In this work we have studied the influence of porosity on the structural and electronic properties of porous silicon and comparing them to those of the solid (c-Si ) in order to understand changes in these properties when it is reduced to nanometric sizes.

ICCAP2021
Publication
Abstracts of 1st International Conference on Computational & Applied Physics
PDF
Published
March 8, 2022
Series
AIJR Abstracts
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