Surface Metal Effect on I(V) Characteristics Ti/6H-Sic Schottky Diode at Room Temperature

Authors

Abderrahmane Bekaddour
Laboratoire de MicroElectronique Appliqué, Faculté de Génie Electrique, Université de Sidi Bel Abbes (Algérie)
Schahrazade Tizi
Laboratoire de MicroElectronique Appliqué, Faculté de Génie Electrique, Université de Sidi Bel Abbes (Algérie)
Baya Zebentout
Laboratoire de MicroElectronique Appliqué, Faculté de Génie Electrique, Université de Sidi Bel Abbes (Algérie)
Zineb Benamara
Laboratoire de MicroElectronique Appliqué, Faculté de Génie Electrique, Université de Sidi Bel Abbes (Algérie)
Boudali Akkal
Laboratoire de MicroElectronique Appliqué, Faculté de Génie Electrique, Université de Sidi Bel Abbes (Algérie)

Synopsis

The semiconductor industry is interested in materials that can fulfill the required conditions in the areas where silicon cannot fulfill the specifications such as for example applications in power electronics and microwave and applications in the field of photovoltaics. Thanks to its wide bandgap, good thermal conductivity and high chemical and physical stability, as well as a higher breakdown field than Si, solid silicon carbide SiC is an innovative success in components that operate at high temperatures. SiC also has interesting mechanical properties due to its hardness, its high resistance to heat1,2,3,4.

ICCAP2021
Published
March 8, 2022