Cathodoluminescence Calculation of AlGaN/GaN Quantum-Wells by Monte Carlo Model: Effect of Compositional and Temperature

Authors

Redha. Aouati
Departement of physics, Laboratoire Couches Minces et Interfaces (LCMI), University Frères Mentouri Constantine1, 25000 Constantine, Algeria, Department of Physics, Laboratoire des Matériaux et Structures des Systèmes Electromécaniques et Leurs Fiabilités, University of Oum-El-Bouaghi, Oum-El-Bouaghi, 04000, Algeria
A. Nouiri
Department of Physics, Laboratoire des Matériaux et Structures des Systèmes Electromécaniques et Leurs Fiabilités, University of Oum-El-Bouaghi, Oum-El-Bouaghi, 04000, Algeria
H. Djaaboube
Departement of physics, Laboratoire Couches Minces et Interfaces (LCMI), University Frères Mentouri Constantine1, 25000 Constantine, Algeria
A. Bouabellou
Departement of physics, Laboratoire Couches Minces et Interfaces (LCMI), University Frères Mentouri Constantine1, 25000 Constantine, Algeria

Synopsis

In this paper, a AlGaN/GaN multi-quantum wells (MQWs) with AlxGa1-xN barriers and GaN quantum wells have been studied using Monte Carlo calculations and cathodoluminescence (CL) technique, in this study we demonstrate the influence of important parameters such as Al mole content (x) and temperature (T) in AlGaN/GaN. The cathodoluminescence signal CL is calculated in AlGaN/GaN taking into account compositional, temperature and confinement phenomenon of electrons within the quantum well of GaN.

ICCAP2021
Publication
Abstracts of 1st International Conference on Computational & Applied Physics
PDF
Published
March 8, 2022
Series
AIJR Abstracts
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