The Window Layer Doping Effect on the Performance of a SiOx:H Based Solar Cells

Authors

Tayeb Youcef Belabbas
Laboratoire de Physique des Plasmas, des Matériaux Conducteurs et leurs Applications (LPPMCA), Université des Sciences et de la technologie Mohamed-Boudiaf, Oran, Algérie
Wafa Hadj Kouider
Laboratoire de Physique des Plasmas, des Matériaux Conducteurs et leurs Applications (LPPMCA), Université des Sciences et de la technologie Mohamed-Boudiaf, Oran, Algérie
Abbas Belfar
Laboratoire de Physique des Plasmas, des Matériaux Conducteurs et leurs Applications (LPPMCA), Université des Sciences et de la technologie Mohamed-Boudiaf, Oran, Algérie

Synopsis

In this work, the conversion efficiency of hydrogenated amorphous silicon oxide (a-SiOx:H) based solar cells was analyzed and designed by SCAPS-1D software. So, we have investigated by numerical simulation the influence of the p-nc-SiOx:H window layer doping concentration (Na) on the performance of the n-i-p single junction solar cell. However, our calculation was carried out by variyng the doping concentration (Na) between 1018 and 3×1019 cm-3. The best results obtained with the Na optimized value are VOC = 989 mV, JSC = 13.9 mA/cm², FF = 77.6 % and a conversion efficiency value equal to 10.67%.

ICCAP2021
Published
March 8, 2022