First Principles Investigation of Structural and Electronic Properties of AlN/GaN Superlattices Growth Along Various Crystallographic Axes

The group III-nitrides semiconductors, InN, GaN and AlN and their alloys are of continuing great interest due to their vast technical application as design of Laser Diodes and Light- Emitting Diodes (LED's) operating in the short-wavelength from blue–green [1-5], ranging from 0.667 to 4.904 eV. The AlN and GaN lattice parameters are approaching each other, and significantly smaller than that of InN [6], the challenge of the lattice mismatch between the epitaxial layers and substrates can be solved by introduced a small amount of InN [7].