Ab-initio Investigation of Structural, Electronic and Topological Properties of Half- Heusler Compounds: TiRhz (Z=Sb,Bi)

Topological insulator (TI) is a new class of materials discovered recently, which has a insulating gap in the bulk and metallic surface states ¹. In recent years, TIs have generated a great interest in view of their great potential technological for spintronic and quantum computing applications ^1,2. Currently, the search for TIs is extended to the Heusler family ^3,4 due to their various interesting physical properties such as magnetism, spintronics, superconductivity, half-metallicity and thermoelectricity. In this work, we have investigated the structural, electronic and topological properties of half- Heusler compounds TiRhZ(Z=Sb,Bi) in order to discuss the topological band structure behavior.