Effect of the Substrate on the Structural Properties of Cu2ZnSnS4 Thin Films Synthesized by Electrodeposition
Synopsis
The quaternary compound Cu2ZnSnS4 semiconductor have gained much attention in recent years due to its promising optical properties1. Moreover, low cost, cheap, earth-abundant as well as non-toxicity of its elements1,2. In addition, this semiconductor is considered as one of the potential absorber materials for the next-generation solar cells3. The aim of the present work is to deposit the CZTS thin films on the ITO and the FTO substrates by the one-step electrodeposition method followed by the sulphurization. The influence of the ITO and FTO on structural properties of the elaborated CZTS film was then investigated.
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