Design and Analysis of a Dual Material Triple Gate TFET with the Pocket Doping for the Performance Enhancement

Authors

Rahul Gupta
Dept. of Electronics and Communication Engineering DrB.R.Ambedkar NIT Jalandhar,India
Mamta Khosla
Dept. of Electronics & Communication Engineering National Institute of Technology Jalandhar , India
Girish Wadhwa
Dept. of ECE Dr. B.R.Ambedkar NIT Jalandhar,India
DOI: https://doi.org/10.21467/proceedings.114.69

Synopsis

In this investigated work, we have analysed the miscellaneous figure of merit for Double metal Triple gate TFET. Various techniques have been utilized to improve the ON-state driven current in the drain by doing a comprehensive analysis. Different techniques are examined and correlated by using the TCAD Silvaco tool to get excellent ON current. Further work function engineering has been done in the optimized DMTG-TFET to increase its performance and finally, we introduce pocket doping that increases the ON current (2.34×10-3) and also ION/IOFF ratio (4.36×1014) with subthreshold (SS) of 25.8mV/decade. The pocket doped DMTG-TFET adequately suppress the ambipolarity and endeavour about 20 times higher ION as compared to conventional DMTG-TFET.

WREC21
Publication
Proceedings of International Conference on Women Researchers in Electronics and Computing
PDF
Published
September 22, 2021
Series
AIJR Proceedings
Online ISSN
2582-3922
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