Design and Analysis of a Dual Material Triple Gate TFET with the Pocket Doping for the Performance Enhancement


Rahul Gupta
Dept. of Electronics and Communication Engineering DrB.R.Ambedkar NIT Jalandhar,India
Mamta Khosla
Dept. of Electronics & Communication Engineering National Institute of Technology Jalandhar , India
Girish Wadhwa
Dept. of ECE Dr. B.R.Ambedkar NIT Jalandhar,India


In this investigated work, we have analysed the miscellaneous figure of merit for Double metal Triple gate TFET. Various techniques have been utilized to improve the ON-state driven current in the drain by doing a comprehensive analysis. Different techniques are examined and correlated by using the TCAD Silvaco tool to get excellent ON current. Further work function engineering has been done in the optimized DMTG-TFET to increase its performance and finally, we introduce pocket doping that increases the ON current (2.34×10-3) and also ION/IOFF ratio (4.36×1014) with subthreshold (SS) of 25.8mV/decade. The pocket doped DMTG-TFET adequately suppress the ambipolarity and endeavour about 20 times higher ION as compared to conventional DMTG-TFET.

September 22, 2021
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