Novel Non-planar Structures of TFET Device to Enhance Performance

Authors

Tulika Chawla
Nano electronics Research lab, National Institute of Technology Jalandhar, India tulikachawla1@gmail.com
Mamta Khosla
Dept. of Electronics & Communication Engineering National Institute of Technology Jalandhar , India
Balwinder Raj
ECE Department National Institute of Technical Teachers Training and Research Chandigarh, India
Sanjeev Kumar Sharma
Department of Electronics and Communication Engineering, National Institute of Technology, Jalandhar,India
DOI: https://doi.org/10.21467/proceedings.114.67

Synopsis

This paper reviews the development of various structures of Tunnel Field Effect Transistors. In order to enhance the on-state current and decrease the short-channel effects, various non-planar structures were designed. Among all these non-planar structures, DGDM-GeOI Vertical TFET structure not only provide the benefits of performance enhancement but also fulfill the requirement of reduced footprint of the device.

WREC21
Publication
Proceedings of International Conference on Women Researchers in Electronics and Computing
PDF
Published
September 22, 2021
Series
AIJR Proceedings
Online ISSN
2582-3922
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