Novel Non-planar Structures of TFET Device to Enhance Performance
This paper reviews the development of various structures of Tunnel Field Effect Transistors. In order to enhance the on-state current and decrease the short-channel effects, various non-planar structures were designed. Among all these non-planar structures, DGDM-GeOI Vertical TFET structure not only provide the benefits of performance enhancement but also fulfill the requirement of reduced footprint of the device.
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