Fabrication Process of MBCFET and its Characteristics
This paper demonstrates the fabrication process of a novel 3-D multibridge-channel MOSFET, using the conventional CMOS process. It contains a comparative study of I-V characteristics between planer MOSFET and MBCFET. It shows how conventional MBCFET has a disadvantage of poor gate bias control and leakage characteristics and how it can be avoided by using core insulator.
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