Fabrication Process of MBCFET and its  Characteristics

Amarah Zahra; Tarun Chaudhary; Farhana Shahid; Hritwik Todawat; Vaishnawi Singh; Vidhya Sagar; Vineeta Sahani

Fabrication Process of MBCFET and its Characteristics

Authors

Amarah Zahra

Department of Electronics and Communication Engineering Dr B R Ambedkar National Institute of Technology Jalandhar, India Jalandhar, India

Tarun Chaudhary

Dept. of Electronics & Communication Engineering, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India

Farhana Shahid

Department of Electronics and Communication Engineering Dr B R Ambedkar National Institute of Technology Jalandhar, India Jalandhar, India

Hritwik Todawat

Department of Electronics and Communication Engineering Dr B R Ambedkar National Institute of Technology Jalandhar, India Jalandhar, India

Vaishnawi Singh

Department of Electronics and Communication Engineering Dr B R Ambedkar National Institute of Technology Jalandhar, India Jalandhar, India

Vidhya Sagar

Department of Electronics and Communication Engineering Dr B R Ambedkar National Institute of Technology Jalandhar, India Jalandhar, India

Vineeta Sahani

Department of Electronics and Communication Engineering, Dr B R Ambedkar National Institute of Technology, Jalandhar (Punjab), India

DOI: https://doi.org/10.21467/proceedings.114.66

Synopsis

This paper demonstrates the fabrication process of a novel 3-D multibridge-channel MOSFET, using the conventional CMOS process. It contains a comparative study of I-V characteristics between planer MOSFET and MBCFET. It shows how conventional MBCFET has a disadvantage of poor gate bias control and leakage characteristics and how it can be avoided by using core insulator.