Impact of Layers' Thickness on the Thin-Film Photovoltaic Cells Based on CZTS

The second generation of thin film solar cells uses semiconductor materials such as CZTS, CIS, GaAs, ZnO, etc. These materials have high absorption coefficients compared to crystalline silicon and possess excellent optical and electrical properties, which allow the realization of competitive photovoltaic devices. In our work, we simulate the performance of a thin-film solar cell based on CZTS semiconductors, by studying different solar parameters as: QE quantum efficiency, I-V characteristics, fill factor (FF), open circuit voltage (Voc), and short circuit current density (Jsc). In addition, we are interested in the thickness and doping of the CZTS and GaAs layers to study their influence on the output parameters. We used the "SCAPS1D" numerical simulation program to model our device and study thin-film solar cells. Our work is important because it contributes to understanding and improving the performance of thin-film solar cells, who get high potential to providing electricity by renewable sources.