POST ANNEALING ANALYSIS OF Mg DOPED ZnO THIN FILMS DEVELOPED BY ELECTRODEPOSITION TECHNIQUE

In past two decades, group II-VI semiconductor have more attention by research community because of their unique properties and potential applications in device fabrication. Among these materials, zinc oxide (ZnO) is the member of group II-VI compound and it is best photo-conducting materials, owing to its optical, electrical, optoelectronic properties as well as applications. For the tuning of structural and optical properties ZnO can be simply modified by alloying Mg. Here we investigated the effects of annealing on the structural and optical properties of Mg doped ZnO thin films. A nanocrystalline ZnMgO thin film was successfully developed by electrodeposition technique. The structural, compositional and optical properties of as deposited and annealed ZnMgO thin films were studied by XRD, SEM, EDS, AFM, UV- VIS spectroscopy and PL spectroscopy. The diffraction peak of ZnMgO films observed at 2θ ≃ 36° with preferred plane indicate the crystalline nature of ZnMgO film. Crystalline size has been calculated by using Scherrer formula. A SEM photograph shows that after annealing films at 400°C distribution of grains on the film surface was more compact.